ROHM has announced the development of nextgeneration SiC (Silicon Carbide) Schottky barrier diodes (SBD), featuring lower loss and higher voltage capability compared to siliconbased SBDs. In addition, the SCS110A series provides advantages over even other SiC SBDs currently on the market regarding forward voltage and operating resistance. This makes them ideal for a wide range of applications, including PFC (power factor correction) circuits, converters, and inverters for power conversion such as those used in EV/HEV and air conditioning units.
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